BiCS FLASH offers many advantages over planar NAND flash memory
The vertically stacked 3D flash memory, BiCS FLASH, has far higher die area density compared to the prior state-of-the-art technology, 2D NAND flash memory.
Spaces between memory cells in BiCS FLASH are far wider than in 2D NAND flash memory. This made it possible to improve the programming speed by increasing the amount of data for a single-shot programming sequence.
BiCS FLASH’s wide open spaces between memory cells reduce cell coupling and improve reliability compared to the 2D NAND flash memory.
BiCS FLASH reduced the power consumption per unit of programming data by increasing the amount of data for a single-shot programming sequence compared to the 2D NAND flash memory.